Maitra, Kingsuk, Electron Transport in Bulk-Si NMOSFETs in presence of High-κ Gate Insulator – Charge Trapping and Mobility
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منابع مشابه
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The use of hybrid orientation technology (HOT) with direct silicon bond (DSB) wafers consisting of a (1 1 0) crystal orientation layer bonded to a bulk (1 0 0) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to higher performance materials. However, the material quality of nMOSFETs regions, which has been undergone amorphization/templated recrystallizatio...
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تاریخ انتشار 2005